I-United States iphuhlisa izixhobo ze-semiconductor ezine-conductivity ephezulu ye-thermal ukucinezela ukufudumeza kwe-chip.
Ngokunyuka kwenani le-transistors kwi-chip, ukusebenza kwekhompyuter yekhompyuter kuyaqhubeka nokuphucula, kodwa uxinaniso oluphezulu luvelisa iindawo ezininzi ezishushu.
Ngaphandle kobuchwephesha bolawulo olufanelekileyo lwe-thermal, ngaphezu kokunciphisa isantya sokusebenza kweprosesa kunye nokunciphisa ukuthembeka, kukho nezizathu zokuthintela ukushisa okukhulu kwaye kufuna amandla ongezelelweyo, ukudala iingxaki zokungasebenzi kwamandla.Ukuze kusonjululwe le ngxaki, iYunivesithi yaseCalifornia, eLos Angeles yavelisa imathiriyeli entsha ye-semiconductor ene-thermal conductivity ephezulu kakhulu ngo-2018, eyenziwe nge-boron arsenide engenasiphene kunye ne-boron phosphide, efana nezinto ezikhoyo zokulahla ubushushu ezifana idayimani kunye nesilicon carbide.ratio, kunye namaxesha angaphezu kwama-3 thermal conductivity.
NgoJuni 2021, iYunivesithi yaseCalifornia, eLos Angeles, yasebenzisa izixhobo ezintsha ze-semiconductor ukudibanisa kunye ne-chips zekhompyutheni zamandla aphezulu ukucinezela ngempumelelo ukuveliswa kokushisa kwee-chips, ngaloo ndlela kuphuculwe ukusebenza kwekhompyutheni.Iqela lophando lifake i-boron arsenide semiconductor phakathi kwe-chip kunye ne-heat sink njengendibaniselwano ye-heat sink kunye ne-chip ukuphucula umphumo wokutshatyalaliswa kobushushu, kwaye lenze uphando malunga nokusebenza kokulawulwa kwe-thermal yesixhobo sangempela.
Emva kokudibanisa i-boron arsenide substrate kwi-gap yamandla ebanzi ye-gallium nitride semiconductor, kwaqinisekiswa ukuba i-thermal conductivity ye-gallium nitride/boron arsenide interface yayiphezulu njenge-250 MW/m2K, kwaye ujongano lwe-thermal ukumelana lufikelele kwinqanaba elincinci kakhulu.I-boron arsenide substrate idityaniswa ngakumbi kunye ne-electron ephezulu ehamba phambili ehamba phambili ye-transistor chip eyenziwe nge-aluminiyam gallium nitride/gallium nitride, kwaye kuqinisekisiwe ukuba umphumo wokutshatyalaliswa kobushushu ungcono kakhulu kunedayimane okanye i-silicon carbide.
Iqela lophando liqhube i-chip kwiqondo eliphezulu, kwaye lilinganisa indawo eshushu ukusuka kwiqondo lokushisa ukuya kwiqondo eliphezulu.Iziphumo zovavanyo zibonisa ukuba ubushushu besinki yobushushu bedayimane yi-137°C, i-silicon carbide heat sink yi-167°C, kunye ne-boron arsenide heat sink yi-87°C kuphela.I-conductivity egqwesileyo ye-thermal yolu jongano ivela kwisakhiwo esikhethekileyo se-phononic band ye-boron arsenide kunye nokudibanisa kwe-interface.Impahla ye-boron arsenide ayinayo kuphela i-conductivity ephezulu ye-thermal, kodwa ine-interface encinci yokumelana ne-thermal.
Ingasetyenziswa njengendawo yokutshisa ubushushu ukufezekisa amandla aphezulu okusebenza kwesixhobo.Kulindeleke ukuba isetyenziswe kumgama omde, unxibelelwano olungenazingcingo oluphezulu kwixa elizayo.Ingasetyenziswa kwibala le-elektroniki yamandla amaza aphezulu okanye ukupakishwa kwe-elektroniki.
Ixesha lokuposa: Aug-08-2022